JPH0137870B2 - - Google Patents
Info
- Publication number
- JPH0137870B2 JPH0137870B2 JP16533184A JP16533184A JPH0137870B2 JP H0137870 B2 JPH0137870 B2 JP H0137870B2 JP 16533184 A JP16533184 A JP 16533184A JP 16533184 A JP16533184 A JP 16533184A JP H0137870 B2 JPH0137870 B2 JP H0137870B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor substrate
- cladding layer
- upper cladding
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 238000005253 cladding Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16533184A JPS6142984A (ja) | 1984-08-06 | 1984-08-06 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16533184A JPS6142984A (ja) | 1984-08-06 | 1984-08-06 | 半導体レ−ザの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6142984A JPS6142984A (ja) | 1986-03-01 |
JPH0137870B2 true JPH0137870B2 (en]) | 1989-08-09 |
Family
ID=15810301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16533184A Granted JPS6142984A (ja) | 1984-08-06 | 1984-08-06 | 半導体レ−ザの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6142984A (en]) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0196897B1 (en) * | 1985-04-02 | 1992-01-22 | Fujitsu Limited | Thermal etching of a compound semiconductor |
JPS62141796A (ja) * | 1985-12-17 | 1987-06-25 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS6370587A (ja) * | 1986-09-12 | 1988-03-30 | Sharp Corp | 半導体レ−ザ |
JP2585230B2 (ja) * | 1986-09-16 | 1997-02-26 | 株式会社日立製作所 | 半導体レ−ザ装置 |
-
1984
- 1984-08-06 JP JP16533184A patent/JPS6142984A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6142984A (ja) | 1986-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69110726T2 (de) | Verfahren zur Herstellung eines Halbleiterlasers. | |
JPH0137870B2 (en]) | ||
JPH0137871B2 (en]) | ||
JPH0513881A (ja) | 半導体レーザの製造方法 | |
JPS6367351B2 (en]) | ||
JPH0137873B2 (en]) | ||
JPH0479157B2 (en]) | ||
JPS6142985A (ja) | 半導体レ−ザおよびその製造方法 | |
JPH0695583B2 (ja) | 半導体レ−ザの製造方法 | |
JPH0519837B2 (en]) | ||
JPH11354880A (ja) | 半導体レーザ素子およびその製造方法 | |
JPH0396290A (ja) | 半導体レーザの製造方法 | |
JPH08186324A (ja) | 半導体レーザおよびその製法 | |
JPH0744307B2 (ja) | 半導体レーザの製造方法 | |
JPS6216037B2 (en]) | ||
JP2717016B2 (ja) | 半導体レーザおよびその製造方法 | |
JPH0327584A (ja) | 半導体レーザの製造方法 | |
JPH04245490A (ja) | 半導体レーザの製造方法 | |
JPH0533550B2 (en]) | ||
JPH0533551B2 (en]) | ||
JPH07263800A (ja) | 半導体レーザおよびその製造方法 | |
JPH02194683A (ja) | 半導体レーザ | |
JPH0685383A (ja) | 半導体レーザ素子およびその製法 | |
JPH08264906A (ja) | 半導体レーザおよびその製造方法 | |
JPS61187285A (ja) | 半導体レ−ザ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |